Toshiba Develops new 1200V SiC MOSFETs for automotive traction inverters – Electric & Hybrid Vehicle Technology International
Toshiba Electronics Europe GmbH has announced the development of new 1200V silicon carbide (SiC) MOSFETs designed for use in automotive applications, particularly traction inverters. The new X5M007E120 MOSFET utilizes a manufacturing process that reduces on-resistance (RDS(ON)) per unit area by up to 30% compared to existing methods. Instead of a striped-pattern construction, the new…
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